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The Eb value slightly decreased as the content of B2O3 increases. The nonlinear I-V characteristics of SnO2 varistors can be ascribed to the Schottky type electrical barrier at the SnO2 grain boundary [8]. The parameters controlling the value of Eb are the grain size and barrier voltage (Vgb) according to the following equation: (1) Eb = VgbNg where the Ng is the average number of grains per centimeter [8]. 3, it can also be seen that the Eb value is quite sensitive to the sintering temperature.

The temperature dependence of the dielectric constant was obtained with an impedance/gain-phase analyzer (Model HP4194A, Hewlett-Packard, Palo Alto, CA). 2TiO3 films are shown in Fig. 1, Figure 2 shows the cross-sectional FE-SEM micrographs of the films. Figures 1 and 2 show that the morphology of the films changes from a grainy to a columnar structure, with the individual layer thicknesses decreasing from 60 to 8 nm. 4M solution showed equiaxed grains with a grain size of 30–50 nm. 1M solution, some large columnar grains of ;200 nm appeared among the small, equiaxed grains.

Germany). Thermal stability of samples were estimated by a thermal gravimetric analyzer (Discovery TGA, Q5000IR, China) from 40℃ to 650℃ at a heating rate of 10℃/min under nitrogen atmosphere. 1 Structure of Graphene The XRD patterns of graphite, GO, graphene were illustrated in Figure 1A. 658 Å. 11 Å because of the existence of oxygen-containing groups between layers. 368 nm, but the intensity was weak. 365 nm) as the oxygen-containing groups removed, but the structure could not back to the original graphite’s orderly structure, only a disordered arrangement of graphite-like structure.

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Advances on Material Science and Manufacturing Technologies by Edited by Qingzhou Xu


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